Electrostatic chucks and substrate processing apparatus including the same

ABSTRACT

An electrostatic chuck includes a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a lower heater section including lower heaters in the dielectric plate between the chuck electrode and the base, and a lower ground electrode between the lower heaters and the base. The chuck further includes an upper heater section including upper heaters between the lower heaters and the chuck electrode, and a upper ground electrode between the upper heaters and the lower heaters, and a plurality of via contact electrodes connecting the upper ground electrode into the lower ground electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. nonprovisional patent application is a continuationapplication of U.S. patent application Ser. No. 15/420,211, filed Jan.31, 2017, which claims priority under 35 U.S.C. § 119 to Korean PatentApplication 10-2016-0031014 filed on Mar. 15, 2016, the entire contentsof each which are hereby incorporated by reference.

BACKGROUND

The described exemplary embodiments relate to an apparatus formanufacturing a semiconductor device and, more particularly, to anelectrostatic chuck for holding a substrate and a substrate processingapparatus.

Generally, semiconductor devices are manufactured by applying aplurality of unit processes. The unit processes may include a thin filmdeposition process, a lithography process, and an etch process. Plasmamay mainly be employed to perform the thin film process and the etchprocess. The plasma may treat a substrate at high temperature. Anelectrostatic chuck may hold the high temperature substrate by anelectrostatic voltage.

SUMMARY

The disclosed exemplary embodiments provide an electrostatic chuck and asubstrate processing apparatus capable of heating a substrate to have anextremely stable or even temperature distribution.

According to exemplary embodiments, an electrostatic chuck may comprise:a base; a dielectric plate on the base; a chuck electrode in thedielectric plate; and a first heater section in the dielectric platebetween the chuck electrode and the base. The first heater section maycomprise: a plurality of first heaters that are separated from eachother in a first direction; and a plurality of first upper plateelectrodes between the plurality of first heaters and the base. Theplurality of first upper plate electrodes may be separated from eachother in the first direction and respectively connected to the pluralityof first heaters.

According to exemplary embodiments, a substrate processing apparatus maycomprise: a chamber; and an electrostatic chuck configured to hold asubstrate in the chamber. The electrostatic chuck may comprise: a base;a dielectric plate on the base; a chuck electrode in the dielectricplate; and a first heater section in the dielectric plate between thechuck electrode and the base. The first heater section may comprise: aplurality of first heaters that are separated from each other in a firstdirection; and a plurality of first upper plate electrodes between theplurality of first heaters and the base. The plurality of first upperplate electrodes may be separated from each other in the first directionand respectively connected to the plurality of first heaters.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a substrate processing apparatus according to exemplaryembodiments.

FIGS. 2 and 3 show an example of the electrostatic chuck of FIG. 1.

FIG. 4 shows an example of the metal base of FIG. 2.

FIG. 5 shows an example of the lower heater section of FIG. 2.

FIG. 6 shows an example of the upper heater section of FIG. 2.

FIG. 7 shows an example of the electrostatic chuck of FIG. 1.

DETAILED DESCRIPTION

The present disclosure now will be described more fully hereinafter withreference to the accompanying drawings, in which various exemplaryembodiments are shown. The invention may, however, be embodied in manydifferent forms and should not be construed as limited to the exemplaryembodiments set forth herein. These example exemplary embodiments arejust that—examples—and many implementations and variations are possiblethat do not require the details provided herein. It should also beemphasized that the disclosure provides details of alternative examples,but such listing of alternatives is not exhaustive. Furthermore, anyconsistency of detail between various exemplary embodiments should notbe interpreted as requiring such detail—it is impracticable to listevery possible variation for every feature described herein. Thelanguage of the claims should be referenced in determining therequirements of the invention.

Although the figures described herein may be referred to using languagesuch as “one embodiment,” or “certain embodiments,” these figures, andtheir corresponding descriptions are not intended to be mutuallyexclusive from other figures or descriptions, unless the context soindicates. Therefore, certain aspects from certain figures may be thesame as certain features in other figures, and/or certain figures may bedifferent representations or different portions of a particularexemplary embodiment.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. Unless the contextindicates otherwise, these terms are only used to distinguish oneelement, component, region, layer or section from another element,component, region, layer or section, for example as a naming convention.Thus, a first element, component, region, layer or section discussedbelow in one section of the specification could be termed a secondelement, component, region, layer or section in another section of thespecification or in the claims without departing from the teachings ofthe present invention. In addition, in certain cases, even if a term isnot described using “first,” “second,” etc., in the specification, itmay still be referred to as “first” or “second” in a claim in order todistinguish different claimed elements from each other.

It will be further understood that the terms “comprises” and/or“comprising,” or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

It will be understood that when an element is referred to as being“connected” or “coupled” to or “on” another element, it can be directlyconnected or coupled to or on the other element or intervening elementsmay be present. In contrast, when an element is referred to as being“directly connected” or “directly coupled” to another element, or as“contacting” or “in contact with” another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

Embodiments described herein will be described referring to plan viewsand/or cross-sectional views by way of ideal schematic views.Accordingly, the exemplary views may be modified depending onmanufacturing technologies and/or tolerances. Therefore, the disclosedexemplary implementations are not limited to those shown in the views,but include modifications in configuration formed on the basis ofmanufacturing processes. Therefore, regions exemplified in figures mayhave schematic properties, and shapes of regions shown in figures mayexemplify specific shapes of regions of elements to which aspects of theinvention are not limited.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the figures. It will be understood thatthe spatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein interpreted accordingly.

Also these spatially relative terms such as “above” and “below” as usedherein have their ordinary broad meanings—for example element A can beabove element B even if when looking down on the two elements there isno overlap between them (just as something in the sky is generally abovesomething on the ground, even if it is not directly above).

Components described as thermally connected or in thermal communicationare arranged such that heat will follow a path between the components toallow the heat to transfer from the first component to the secondcomponent. Simply because two components are part of the same device orpackage does not make them thermally connected. In general, componentswhich are heat-conductive and directly connected to otherheat-conductive or heat-generating components (or connected to thosecomponents through intermediate heat-conductive components or in suchclose proximity as to permit a substantial transfer of heat) will bedescribed as thermally connected to those components, or in thermalcommunication with those components. On the contrary, two componentswith heat-insulative materials therebetween, which materialssignificantly prevent heat transfer between the two components, or onlyallow for incidental heat transfer, are not described as thermallyconnected or in thermal communication with each other. The terms“heat-conductive” or “thermally-conductive” do not apply to a particularmaterial simply because it provides incidental heat conduction, but areintended to refer to materials that are typically known as good heatconductors or known to have utility for transferring heat, or componentshaving similar heat conducting properties as those materials.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present application, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

FIG. 1 shows a substrate processing apparatus 100 according to exemplaryembodiments.

As shown in FIG. 1, the substrate processing apparatus 100 may includean inductively coupled plasma (ICP) etching apparatus. Alternatively,the substrate processing apparatus 100 may include a capacitivelycoupled plasma (CCP) etching apparatus, a mechanical vapor depositionapparatus, or a chemical vapor deposition apparatus. In an exemplaryembodiment, the substrate processing apparatus 100 may include a chamber10, a lift unit 20, a gas supply 30, a radio frequency (RF) electrodeunit 40, a RF power supply unit 50, an electrostatic chuck 60, anelectrostatic voltage supply 70, and a temperature controller 80. Thesubstrate W may be provided in the chamber 10. The lift unit 20 may beconfigured to move the chamber 10 and the substrate W in the chamber 10.The lift unit 20 may be configured to move the substrate relative tochamber 10. The gas supply 30 may provide a reactive gas 16 into thechamber 10. The RF electrode unit 40 may use RF power (not shown) toexcite the reactive gas 16 into a plasma state. The RF power supply unit50 may provide the RF electrode unit 40 with RF power. The electrostaticchuck 60 may hold the substrate W by an electrostatic voltage. Theelectrostatic voltage supply 70 may provide the electrostatic chuck 60with the electrostatic voltage. The temperature controller 80 maymonitor and control a temperature of the electrostatic chuck 60.

The chamber 10 may provide the substrate W with a space isolated fromthe outside atmosphere. For example, the chamber 10 may have a pressureof about 10⁻³ Torr. In an exemplary embodiment, the chamber 10 mayinclude a bottom housing 12 and a top housing 14. The substrate W may beprovided in the bottom housing 12. The top housing 14 may be disposed onthe bottom housing 12.

The lift unit 20 may be placed under the bottom housing 12. The liftunit 20 may be configured to move the bottom housing 12. The top housing14 may be relatively fixed to the bottom housing 12. Alternatively, thebottom housing 12 may be fixed and the top housing 14 may be moved bythe lift unit 20 in a vertical direction of the substrate W. In anexemplary embodiment, the lift unit 20 may include a lift cylinder 22and lift pins 24. The lift cylinder 22 may drive the bottom housing 12to move up and down. Alternatively, the lift cylinder 22 may drive thetop housing 12 to move up and down. When the bottom housing 12 descendsand is separated from the top housing 14, a robot (not shown) may putthe substrate W in place on the lift pins 24 in the bottom housing 12.The lift pins 24 may provide an up-and-down movement to the substrate Win the bottom housing 12. When the top housing 14 is combined with thebottom housing 12 due to its ascent toward the top housing 14, a plasmaprocess may be started. When a manufacturing process for the substrate Wis terminated, the bottom housing 12 may move downward and the lift pins24 may drive the substrate W to move upward. The substrate W may then bereleased from the chamber 10.

The gas supply 30 may be connected to the top housing 14. For example,the gas supply 30 may provide the chamber 10 with the reactive gas 16such as SF₆, HF, CH₃, CH₄, or N₂.

The RF electrode unit 40 may be installed at both the top housing 14 andthe bottom housing 12. In an exemplary embodiment, the RF electrode unit40 may include an antenna electrode 42 and a bias electrode 44. Theantenna electrode 42 may be placed on the top housing 14. The biaselectrode 44 may be placed in the electrostatic chuck 60 of the bottomhousing 12.

The RF power supply unit 50 may be installed outside the chamber 10. Inan exemplary embodiment, the RF power supply unit 50 may include asource power supply 52 and a bias power supply 54. The source powersupply 52 may provide the antenna electrode 42 with a source of RFpower. The RF power may excite the reactive gas 16 into a plasma state.The bias power supply 54 may provide the bias electrode 44 with a biasRF power. The bias RF power may concentrate the reactive gas 16 in theplasma state onto the substrate W. The substrate W may be processed withthe reactive gas 16. For example, the substrate W may be etched.

The electrostatic chuck 60 may be placed in the bottom housing 12. Thelift pins 24 may be provided to pass through the floor of the bottomhousing 12 and the electrostatic chuck 60. When the lift pins 24 movesdownward, the substrate W may be loaded on the electrostatic chuck 60.When the lift pins 24 moves upward, the substrate W may be maintained onthe electrostatic chuck 60, by electrostatic forces.

More particularly, the electrostatic voltage supply 70 may be connectedto the electrostatic chuck 60 which may provide the electrostatic chuck60 with an electrostatic voltage of about ±2500V. The electrostaticvoltage may hold the substrate W onto the electrostatic chuck 60 basedon the Johnsen-Rahbek effect.

The temperature controller 80 may be connected to the electrostaticchuck 60. A temperature sensor 82 may be installed within theelectrostatic chuck 60. The temperature controller 80 may use thetemperature sensor 82 to detect the temperature of the electrostaticchuck 60. The temperature controller 80 may also heat the electrostaticchuck 60 and the substrate W.

FIGS. 2 and 3 show an example of the electrostatic chuck 60 of FIG. 1wherein the electrostatic chuck 60 may include a metal base 110, adielectric plate 120, a chuck electrode 130, a lower ground plateelectrode 140, a lower heater section 150, and an upper heater section160.

The metal base 110 may include an aluminum disc plate. The metal base110 may correspond to the bias electrode 44 of FIG. 1 and may beconnected to the bias power supply 54. The metal base 110 may include aplurality of holes 114 therein. The plurality of holes 114 may penetratethe metal base 110. A plurality of connectors 112 may be respectivelyprovided in each of the holes 114. The connectors 112 may penetrate themetal base 110 and be insulated therefrom. The connectors 112 may berespectively connected to the chuck electrode 130, the lower groundplate 140, the lower heater section 150, and the upper heater section160 on the metal base 110. For example, the connectors 112 may berespectively connected to the chuck electrode 130, the lower groundplate electrode 140, the lower heater section 150, and the upper heatersection 160 by a plurality of via contact electrodes 122 in thedielectric plate 120. Chuck electrode 130 may be connected toelectrostatic voltage supply 70.

The dielectric plate 120 may be placed on the metal base 110. Forexample, the dielectric plate 120 may have a diameter identical to adiameter of the metal base 110. Alternatively, the diameter of thedielectric plate 120 may be less than the diameter of the metal base110. For example, an adhesive or bolts may be provided to combine themetal base 110 with the dielectric plate 120. The dielectric plate 120may include an aluminum oxide (Al₂O₃) ceramic. The dielectric plate 120may include a plurality of cooling gas line holes 124 therein. Thecooling gas line holes 124 may be provided to introduce a cooling gas(not shown) such as helium into under the substrate W. The cooling gasmay cool the substrate W. The dielectric plate 120 and the metal base110 may have thermal expansion coefficients different from each other.For example, the thermal expansion coefficient may be larger for themetal base 110 than for the dielectric plate 120. The difference of thethermal expansion coefficient may electrically disconnect the connectors112 from the via contact electrodes 122. The connectors 112 may bedamaged by thermal expansion differences of the metal base 110 and thedielectric plate 120.

FIG. 4 shows an example of the metal base 110 of FIG. 2 in which theconnectors 112 may be mainly disposed at a central region 118 of themetal base 110. A plurality of refrigerant gas holes 113 and a pluralityof lift pin holes 115 may be mainly disposed at an edge region 116 ofthe metal base 110. A bias RF power connection terminal 111 may bedisposed at a center of the metal base 110. The thermal expansion of themetal base 110 may affect more severely the connectors 112 adjacent tothe edge region 116 than the connectors 112 adjacent to the bias RFpower connection terminal 111. The connectors 112 closer to the centerof the metal base may shift in a shorter radius direction R1 of themetal base 110 than the connectors 112 adjacent to the edge region 116.Accordingly, the aggregation of the connectors 112 at the central region118 may prevent the connectors 112 from damage and electricaldisconnection with the via contact electrodes 122 caused by thedifference of the thermal expansion coefficient between the metal base110 and the dielectric plate 120.

As shown in FIGS. 2 and 3, the chuck electrode 130 may be disposedwithin the dielectric plate 120. For example, the chuck electrode 130may include a metal disc. The chuck electrode 130 may have a diameterless than the diameter of the dielectric plate 120. The via contactelectrodes 122 may connect the chuck electrode 130 to the connectors112.

The lower ground plate electrode 140 may be disposed in the dielectricplate 120 between the chuck electrode 130 and the metal base 110. Forexample, the lower ground plate electrode 140 may include a disc ofmetal such as tungsten. The via contact electrodes 122 may connect thelower ground plate electrode 140 to the connectors 112.

The lower heater section 150 may be disposed in the dielectric plate 120between the chuck electrode 130 and the metal base 110. The lower heatersection 150 may have a diameter less than the diameter of the dielectricplate 120. For example, the lower heater section 150 may include lowerheaters 152 and lower plate electrodes 154.

The lower heaters 152 may be concentrically shaped macro heaters. Forexample, the lower heaters 152 may include an alloy of nickel andchromium. The via contact electrodes 122 may connect the lower heaters152 to the lower plate electrodes 154.

The lower plate electrodes 154 may be disposed between the lower heaters152 and the lower ground plate electrode 140. The via contact electrodes122 may connect the lower plate electrodes 154 to the connectors 112.The via contact electrodes 122 and the lower plate electrodes 154 mayserve as electrical interconnection lines between the connectors 112 andthe lower heaters 152. The via contact electrodes 122 may be verticalinterconnection lines, and the lower plate electrodes 154 may behorizontal interconnection lines. The via contact electrodes 122 and thelower plate electrodes 154 may include tungsten.

FIG. 5 shows an example of the lower heater section 150 of FIG. 2 inwhich the lower heaters 152 of the lower heater section 150 may includefirst to fourth ring heaters 152 a to 152 d. The first to fourth ringheaters 152 a to 152 d may be separated from each other in a radiusdirection R2 of the dielectric plate 120. The first to fourth ringheaters 152 a to 152 d may respectively have radii that are sequentiallyincreased. For example, the first ring heater 152 a may be disposedwithin the second ring heater 152 b. The second ring heater 152 b may bedisposed within the third ring heater 152 c. The third ring heater 152 cmay be disposed within the fourth ring heater 152 d. An additional ringheater (not shown) may further be disposed outside the fourth ringheater 152 d.

The lower plate electrodes 154 may be separated from each other in adirection crossing the first to fourth ring heaters 152 a to 152 d. Inan exemplary embodiment, the lower plate electrodes 154 may be separatedfrom each other in an azimuth direction. Each of the lower plateelectrodes 154 may be arc plate electrode. For example, the lower plateelectrodes 154 may include arc-shaped plate electrodes that areseparated into eight segments. Each of the lower plate electrodes 154may have an azimuth angle θ₁ of about 45° at its corner. Each of thefirst to fourth ring heaters 152 a to 152 d may be connected to theplurality of the lower plate electrodes 154. The lower plate electrodes154 may minimize or reduce heat generation from electrical horizontalinterconnection lines of the first to fourth ring heaters 152 a to 152d.

As shown in FIGS. 2 and 3, the upper heater section 160 may be disposedbetween the lower heaters 152 and the chuck electrode 130. The upperheater section 160 may have a diameter substantially the same as thediameter of the lower heater section 150. In an exemplary embodiment,the upper heater section 160 may include upper heaters 162, an upperground plate electrode 164, and upper plate electrodes 166.

The upper heaters 162 may be disposed at an edge region of thedielectric plate 120. Alternatively, the upper heaters 162 may bedisposed at a center of the dielectric plate 120. The upper heaters 162may be micro heaters whose sizes are less than those of the lowerheaters 152. The upper heaters 162 may include an alloy of nickel andchromium.

The upper ground plate electrode 164 may be disposed between the upperheaters 162 and the lower heaters 152. The upper heaters 162 may becommonly connected to the upper ground plate electrode 164 through thevia contact electrodes 122. The via contact electrodes 122 may connectthe upper ground plate electrode 164 to the lower ground plate electrode140. The via contact electrodes 122 may also connect the lower groundplate electrode 140 to the connectors 112.

The upper plate electrodes 166 may be disposed between the upper groundplate electrode 164 and the lower heaters 152. The upper heaters 162 maybe individually connected to the upper plate electrodes 166 through thevia contact electrodes 122. The via contact electrodes 122 may connectthe upper plate electrodes 166 to the connectors 112. The via contactelectrodes 122, the lower ground plate electrode 140, the upper groundplate electrode 164, and the upper plate electrodes 166 may be used aselectrical interconnection paths between the upper heaters 162 and theconnectors 112. The lower ground plate electrode 140, the upper groundplate electrode 164, and the upper plate electrodes 166 may minimize orreduce heat generation from electrical horizontal interconnection linesof the upper heaters 162.

FIG. 6 shows an example of the upper heater section 160 of FIG. 2 inwhich the upper heaters 162 may be separated from each other in anazimuth direction. In an exemplary embodiment, each of the upper heaters162 may include an outer arc heater 161 and an inner arc heater 163. Theouter and inner arc heaters 161 and 163 may be separated from each otherin the radius direction R2 of the dielectric plate 120. The outer archeaters 161 may be disposed on circumferences of the inner arc heaters163. The inner arc heaters 163 may be disposed closer to a vertex 168than the outer arc heaters 161. The outer arc heater 161 may have anarea greater than that of the inner arc heater 163. The outer archeaters 161 may be arranged to be the same in number as the inner archeaters 163. For example, ones of the outer and inner arc heaters 161and 163 may consist of sixteen pairs of arc heaters. Alternatively, onesof the outer and inner arc heaters 161 and 163 may consist of 2n pairsof arc heaters. The “n” may be a natural number.

As shown in FIGS. 2 and 6, the outer and inner arc heaters 161 and 163may separately heat the substrate W along the radius direction R2 andthe azimuth direction. Accordingly, the outer and inner arc heaters 161and 163 may heat the substrate W at a stable or even temperaturedistribution.

As shown in FIG. 6, the upper plate electrodes 166 may be arranged tohave a one-to-one match with the upper heaters 162. The upper heaters162 may be positioned to overlap the upper plate electrodes 166. Forexample, each of the upper plate electrodes 166 may have an arc shapehaving the vertex 168. The upper plate electrodes 166 may be separatedfrom each other in the azimuth direction. In an exemplary embodiment,each of the upper plate electrodes 166 may include an outer arc plateelectrode 165 and an inner arc plate electrode 167.

The outer arc plate electrodes 165 and the inner arc plate electrodes167 may be separated from each other in the azimuth direction. The outerarc plate electrodes 165 may be arranged to have the same number as theinner arc plate electrodes 167. For example, ones of the outer and innerarc plate electrodes 165 and 167 may consist of sixteen pairs of arcplate electrodes. The outer and inner arc plate electrodes 165 and 167may be disposed in the same second azimuth angle θ₂. For example, thesecond azimuth angle θ₂ may be about 22.5°. Alternatively, each of theouter arc plate electrodes 165 may have an azimuth angle half the secondazimuth angle θ₂, and likewise each of the inner arc plate electrodes167 may have an azimuth angle half the second azimuth angle θ₂.

The inner arc plate electrodes 167 may be disposed closer to the vertex168 than the outer arc plate electrodes 165 which may extend from thevertex 168 and be disposed outside at least portions of the inner arcplate electrodes 167. A pair of the inner arc plate electrodes 167 maybe placed between a pair of the outer arc plate electrodes 165. Each ofthe outer arc plate electrodes 165 may have an outer diameter greaterthan that of each of the inner arc plate electrodes 167. The outer arcplate electrode 165 may be wider than the inner arc plate electrode 167.

The outer arc heaters 161 may be placed on the outer arc plateelectrodes 165. For example, the outer arc heaters 161 may be disposedto overlap the outer arc plate electrodes 165. The inner arc heater 163may be placed on the inner arc plate electrodes 167. The inner archeater 163 may be disposed to overlap the inner arc plate electrodes167. Alternatively, the inner arc heaters 163 may be placed on the outerarc plate electrodes 165 respectively. The outer arc plate electrodes165 and the inner arc plate electrodes 167 may minimize or reduce heatgeneration from electrical horizontal interconnection lines of the outerarc heaters 161 and the inner arc heaters 163, respectively.

The upper heaters 162 may further include arc heaters (not shown) withinthe inner arc heaters 163. The arc heaters may be separated from eachother in the azimuth direction and the radius direction R2. The upperplate electrodes 166 may further include arc plate electrodes (notshown) disposed within at least portions of the inner arc plateelectrodes 167. The arc plate electrodes may be separated from eachother in the azimuth direction. The arc heaters may be connected to thearc plate electrodes in a one-to-one correspondence relationship. Thearc heaters may heat the substrate W on the dielectric plate 120 at astable or even temperature distribution. The arc plate electrodes mayminimize or reduce heat generation from electrical horizontalinterconnection lines of the arc heaters.

FIG. 7 show an example of the electrostatic chuck 60 of FIG. 1 in whichthe electrostatic chuck 60 a may include an upper heater section 160 ahaving upper ground plate electrodes 164 a. The metal base 110, thedielectric plate 120, the chuck electrode 130, the lower ground plateelectrode 140, and the lower heater section 150 are disclosed in FIG. 3.In an exemplary embodiment, the upper ground plate electrodes 164 a mayhave the same shape as a shape of the lower plate electrodes 154. Forexample, the upper ground plate electrodes 164 a may includesector-shaped plate electrodes. The upper ground plate electrodes 164 aare eight to sixteen. Each of upper ground plate electrodes 164 a may beconnected to four upper heaters 162.

According to exemplary embodiments of the present inventive concept, theelectrostatic chuck may include the plate electrodes and the heaters.Ones of the plate electrodes and the heaters may be separated from eachother in the radius direction of the dielectric plate and in the azimuthdirection. The separated heaters may heat the substrate on thedielectric plate at a stable or even temperature distribution. Theseparated plate electrodes may minimize or reduce electricalinterconnection lines of the heaters.

Although the present invention has been described in connection withexemplary embodiments illustrated in the accompanying drawings, theinventive concepts disclosed herein are not limited thereto. It will beapparent to those skilled in the art that various substitution,modifications and changes may be made to the exemplary embodimentswithout departing from the scope and spirit of the inventions set forthin the following claims.

We claim:
 1. An electrostatic chuck comprising: a base; a dielectricplate on the base; a chuck electrode in the dielectric plate; and alower heater section including lower heaters in the dielectric platebetween the chuck electrode and the base, and a lower ground electrodebetween the lower heaters and the base; an upper heater sectionincluding upper heaters between the lower heaters and the chuckelectrode, and an upper ground electrode between the upper heaters andthe lower heaters; and a plurality of via contact electrodes connectingthe upper ground electrode to the lower ground electrode, wherein thelower heater section further comprises lower plate electrodes betweenthe lower heaters and the lower ground electrode, and wherein the upperheater section further comprises upper plate electrodes between theupper ground electrode and the lower heaters.
 2. The electrostatic chuckof claim 1, wherein the plurality of via contact electrodes connect thelower ground electrode the lower heaters and the upper ground electrodeto the upper heaters.
 3. The electrostatic chuck of claim 1, wherein theplurality of via contact electrodes connect the lower plate electrodesto the lower heaters and the upper plate electrodes to the upperheaters.
 4. The electrostatic chuck of claim 1, wherein the upper groundelectrode has a shape similar to a shape of the lower plate electrodes.5. The electrostatic chuck of claim 1, wherein each of the lower plateelectrodes has an azimuthal angle of 2 π/n, wherein n is a number of thelower heaters.
 6. The electrostatic chuck of claim 1, wherein the upperplate electrodes form a circular plate, and wherein each of the upperplate electrodes comprises: a pie-shaped sector having a first azimuthalangle and a vertex corresponding to a center of the circular plate; andan inner sector formed inside the pie-shaped sector to extend from thevertex toward an outer circumference of the circular plate in a radialdirection of the base, wherein the inner sector has a smaller azimuthalwidth and a smaller radial length than the pie-shaped sector.
 7. Theelectrostatic chuck of claim 6, wherein each of the upper heaterscomprises: an outer arc heater disposed on and vertically overlapping arespective pie-shaped sector and outside of a respective inner sectorfrom a top-down view, the outer arc heater electrically connected to thepie-shaped sector; and an inner arc heater disposed on and verticallyoverlapping the inner sector, and electrically connected to the innersector.
 8. The electrostatic chuck of claim 1, wherein each of the lowerheaters is larger than each of the upper heaters.
 9. The electrostaticchuck of claim 1, wherein the lower ground electrode and the upperground electrode are metal discs.
 10. An electrostatic chuck comprising:a base having an edge region and a center region inside the edge region;a plurality of connectors in the center region; a dielectric plate onthe base and the plurality of connectors; a chuck electrode disposed inthe dielectric plate and connected to the plurality of connectors; alower heater section including a lower heater between the chuckelectrode and the plurality of connectors, a lower ground electrodebetween the lower heater and the plurality of connectors, and a lowerplate electrode between the lower ground electrode and the lower heater;and an upper heater section including an upper heater between the lowerheater and the chuck electrode, an upper plate electrode between theupper heater and the lower heater, and an upper ground electrode betweenthe upper plate electrode and the upper heater, wherein the lower groundelectrode is connected to the upper ground electrode.
 11. Theelectrostatic chuck of claim 10, wherein the base has a coolant gas holeand a lift pin hole.
 12. The electrostatic chuck of claim 11, whereinthe dielectric plate has a gas line hole disposed on the chuckelectrode, the gas line hole connected to the coolant gas hole.
 13. Theelectrostatic chuck of claim 10, wherein the plurality of connectorsconnect to the chuck electrode, the first lower ground electrode, thelower plate electrode, and the upper plate electrode.
 14. Theelectrostatic chuck of claim 13, further comprising a plurality of viacontacts, wherein the plurality of via contacts comprise: a plurality oflower signal via contact electrodes connecting the lower plate electrodeand the upper plate electrode to the plurality of connectors; aplurality of upper signal via contact electrodes connecting the lowerheater and the upper heater to the lower plate electrode and the upperplate electrode respectively; a lower ground via contact electrodeconnecting the lower ground electrode to one of the plurality ofconnectors; and an upper ground via contact electrode connecting theupper ground electrode to the lower ground electrode.
 15. A substrateprocessing apparatus, comprising: a chamber; and an electrostatic chuckconfigured to hold a substrate in the chamber, wherein the electrostaticchuck comprises: a base; a dielectric plate on the base; a chuckelectrode in the dielectric plate; and a lower heater section includinglower heaters in the dielectric plate between the chuck electrode andthe base, and a lower ground electrode between the lower heaters and thebase; an upper heater section including upper heaters between the lowerheaters and the chuck electrode, and an upper ground electrode betweenthe upper heaters and the lower heaters; and a via contact electrodeconnecting the upper ground electrode to the lower ground electrode,wherein the lower heater section further comprises lower plateelectrodes between the lower heaters and the lower ground electrode, andwherein the upper heater section further comprises upper plateelectrodes between the upper ground electrode and the lower heaters. 16.The substrate processing apparatus of claim 15, further comprising: atemperature sensor disposed in the electrostatic chuck; and atemperature controller that receives a detection signal from thetemperature sensor to control a temperature of the lower heater sectionand the upper heater section.
 17. The substrate processing apparatus ofclaim 16, wherein the electrostatic chuck further comprises a pluralityof connectors disposed at a central region of the base.
 18. Thesubstrate processing apparatus of claim 17, wherein the via contactelectrode connects the lower ground electrode to one of the plurality ofconnectors.
 19. The substrate processing apparatus of claim 15, furthercomprising: a gas supply configured to provide a gas to the substrate inthe chamber; and a radio frequency electrode unit including a biaselectrode that provides a radio frequency power to the gas, wherein thebase is the bias electrode.